Pentamaster unveils its 2nd generation WLBI-22 which paves the way for cost effective and advance burn-in test solution for SiC wafer.

Pentamaster unveils its 2nd generation WLBI-22 which paves the way for cost effective and advance burn-in test solution for SiC wafer.

Penang, Malaysia (May 2022) – As a global one-stop solutions provider for standard and customized test equipment, Pentamaster is proud to announce the release of our second-generation wafer burn-in tester – WLBI-22 that paves the way for the future of electric vehicles, ensuring that every single silicon carbide (SiC) that enters EVs are automotive-qualified before real world usage.

At Pentamaster, we don’t stay complacent and are constantly developing our solutions alongside the trends & technologies around us to accommodate new test criteria and requirements from our customers. We know that silicon carbide (SiC) devices are extremely expensive to fabricate and package. Failures in the end markets of electric vehicles, chargers, and energy infrastructure would be catastrophic for both manufacturers and consumers. These devices may function perfectly fine at normal temperatures, but failures and irregularities will become apparent in more extreme environments. To make things worse, SiC has many defects related to the fragile/brittle crystalline structure, including doping related defects and trench failures. Due to qualification requirements to operate at very extreme temperatures for long periods of time, there’s no skimping out on testing.

Our 2nd generation WLBI-22 offers shorter test time with higher efficiency compared to its predecessor. It accommodates 2 wafer test parallelism, 480 die test parallelism per wafer with independent driver channels for simultaneous voltage/current measurement as well as temperature monitoring. Designed with a seal chamber to accommodate inert gases such as nitrogen and arc suppression gasses, it protects the DUTs from arc & oxidation while keeping the tester in an operational temperature state without overheating.

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