Wafer-Level Power Device Burn-in Test Handler

Wafer-Level Power Device Burn-in Test Handler

It is the latest wafer-level burn-in test system designed for power devices. This innovative tester accommodates 2 wafer test parallelism, 480 die test parallelism per wafer. Independent driver channels for simultaneous voltage/current measurement as well as temperature monitoring. Designed with a seal chamber to accommodate inert gas such as nitrogen and arc suppression gasses, it protects the DUTs from arc & oxidation while keeping the tester in an operational temperature state without overheating.

  • Incorporated with fully automated handlers
  • All in one solution with built-in test chambers
  • High-Level User Defined Burn-in Profile (Continuous or Pulse Mode)
  • Integrated with Nitrogen Gas Cooling System
  • Easy Load & Unloading of Substrate Tiles
  • Programmable Temperature Profile
Product Specification
Input/ Output Option Wafer
Channel Number Up to 720 units
Burn-in Duration Programmable
Electrical Parameters Measurements Drain Voltage Sourcing: Up to 3,000V DC
Test Parameters: Vth, IGSS, IDSS, VDSon
Leakage Current Measurement Accuracy: 1%
Programmable Temperature Control Temperature Rise Time: 15 minutes (based on room temp to 150°C)
Temperature Tolerance: +/- 5°C
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