It is the latest wafer-level burn-in test system designed for power devices. This innovative tester accommodates 2 wafer test parallelism, 480 die test parallelism per wafer. Independent driver channels for simultaneous voltage/current measurement as well as temperature monitoring. Designed with a seal chamber to accommodate inert gas such as nitrogen and arc suppression gasses, it protects the DUTs from arc & oxidation while keeping the tester in an operational temperature state without overheating.
|Input/ Output Option||Wafer|
|Channel Number||Up to 720 units|
|Electrical Parameters Measurements||Drain Voltage Sourcing: Up to 3,000V DC
Test Parameters: Vth, IGSS, IDSS, VDSon
Leakage Current Measurement Accuracy: 1%
|Programmable Temperature Control||Temperature Rise Time: 15 minutes (based on room temp to 150°C)
Temperature Tolerance: +/- 5°C